IXFH102N15T Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFH102N15T Datasheet PDF : 6 Pages
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IXFA102N15T IXFH102N15T
IXFP102N15T
Fig. 7. Input Admittance
160
140
120
100
80
60
TJ = 150ºC
25ºC
- 40ºC
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
275
250
225
200
175
150
125
100
TJ = 150ºC
75
TJ = 25ºC
50
25
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD - Volts
120
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
150ºC
20
40
60
80
100
120
140
160
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS = 75V
I D = 51A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
QG - NanoCoulombs
10,000
Fig. 11. Capacitance
1000.0
Fig. 12. Forward-Bias Safe Operating Area
1,000
Ciss
RDS(on) Limit
100.0
25µs
100µs
Coss
100
Crss
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10.0
1ms
1.0
0.1
1
TJ = 175ºC
TC = 25ºC
Single Pulse
10ms
100ms
DC
10
100
VDS - Volts
1000
IXYS REF: F_102N15T(6E)9-30-08
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