IXFH102N15T Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFH102N15T Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
VDS= 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS , ID = 25A
RthJC
RthCH
(TO-220)
(TO-247)
IXFA102N15T IXFH102N15T
IXFP102N15T
Characteristic Values
Min. Typ. Max.
TO-220 (IXFP) Outline
50
80
S
5220
pF
685
pF
95
pF
20
ns
14
ns
25
ns
22
ns
87
nC
23
nC
31
nC
Pins: 1 - Gate
2 - Drain
0.33 °C/W
0.50
°C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IRM
QRM
IF = 51A, -di/dt = 100A/μs
VR = 75V, VGS = 0V
Characteristic Values
Min. Typ. Max.
102 A
400 A
1.3 V
120 ns
6.2
A
236
nC
TO-247 (IXFH) Outline
∅P
123
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXFA) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min. Max.
4.7
5.3
2.2 2.54
2.2
2.6
1.0
1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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