IXDD430 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXDD430

30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

IXYS CORPORATION 

IXDN430 / IXDI430 / IXDD430 / IXDS430

Electrical Characteristics

Unless otherwise noted, temperature over -55 oC to +125 oC, 4.5 ≤ VCC ≤ 35V .

All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions.

Symbol Parameter

Test Conditions

Min

Typ

Max Units

VIH

VIL

VIN

ROH

ROL

tR

tF

tONDLY

tOFFDLY

VCC

High input voltage

Low input voltage

Input voltage range

Output resistance

@ Output high

Output resistance

@ Output Low

Rise time

Fall time

On-time propagation

delay

Off-time propagation

delay

Power supply voltage

4.5V ≤ VCC ≤ 18V

4.5V ≤ VCC ≤ 18V

VCC = 18V

VCC = 18V

CL=5600pF Vcc=18V

CL=5600pF Vcc=18V

CL=5600pF Vcc=18V

CL=5600pF Vcc=18V

3.2

V

1.1

V

-5

VCC + 0.3

V

0.46

Ω

0.4

Ω

20

ns

18

ns

58

ns

51

ns

8.5

18

35

V

5-lead TO-220 Outline (IXD_430CI)

5-lead TO-263 Outline (IXD_430YI)

28-pin SOIC Outline (IXD_430SI)

NOTE: Mounting tabs, solder tabs, or heat sink metalization on all packages are connected to ground.

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