IXDA20N120AS Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXDA20N120AS Datasheet PDF : 4 Pages
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IXDA 20N120 AS
7
140
m6J
1n2s0
Eon 5
4
3
2
1
td(on)
tr
Eon
100 t
80
VCE = 600V
VGE = ±15V 60
RG = 68W
TJ = 125°C 40
20
0
0
0
10
20
30 A 40
IC
Fig. 5 Typ. turn on energy and switching
times versus collector current
12
VCE = 600V
mJ VGE = ±15V
IC = 20A
Eon 8 TJ = 125°C
240
td(on) ns
tr 160 t
Eon
4
80
W 0
0
0 50 100 150 200 250 300 350
RG
Fig. 7 Typ. turn on energy and switching
times versus gate resistor
40
3A5
ICM 30
25
20
15
RG = 68W
TJ = 125°C
VCEK < VCES
10
5
0
0 200 400 600 800 1000 1200 V
VCE
Fig. 9 Reverse biased safe operating area
RBSOA
5
mJ
4
Eoff
3
2
1
500
td(off) ns
Eoff 400
VCE = 600V
VGE = ±15V
RG = 68W
TJ = 125°C
tf
t
300
200
100
0
0
Fig. 6
0
10
20
30 A 40
IC
Typ. turn off energy and switching
times versus collector current
4
mJ
Eoff 3
VCE = 600V
VGE = ±15V
IC = 20A
TJ = 125°C
2
1600
Eoff
ns
td(off)
1200
t
800
1
400
0
0
Wtf 0
50 100 150 200 250 300 350
RG
Fig. 8 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
ZthJC
0.1
diode
IGBT
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01
IXDH20N120AU1
0.1 s 1
t
Fig. 10 Typ. transient thermal impedance
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4-4
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