ITS640S2 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

ITS640S2

Smart Sense High-Side Power Switch For Industrial Applications

Infineon Technologies 

Parameter and Conditions

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Symbol

PROFET® ITS 640S2

Values

Unit

min typ max

Operating Parameters

Operating voltage 4)

Undervoltage shutdown

Undervoltage restart

Tj =-40...+150°C:

Tj =-40...+150°C:

Tj =-40...+25°C:

Tj =+150°C:

Vbb(on)

Vbb(under)

Vbb(u rst)

5.0

-- 34 V

3.2

-- 5.0 V

-- 4.5 5.5 V

6.0

Undervoltage restart of charge pump

see diagram page 12

Tj =-40...+25°C:

Tj =25...150°C:

Vbb(ucp)

-- 4.7 6.5 V

--

-- 7.0

Undervoltage hysteresis

∆Vbb(under)

-- 0.5

-- V

ITS640S2 ∆Vbb(under) = Vbb(u rst) - Vbb(under)

Overvoltage shutdown

Tj =-40...+150°C: Vbb(over)

34

-- 43 V

Overvoltage restart

Tj =-40...+150°C: Vbb(o rst)

33

--

-- V

Overvoltage hysteresis

Tj =-40...+150°C: ∆Vbb(over)

--

1

-- V

Overvoltage protection5)

Ibb=40 mA

Tj =-40°C:

Tj =+25...+150°C

Vbb(AZ)

41

--

-- V

43 47 52

Standby current (pin 4)

VIN=0

Tj=-4T0j=...1+5205°°CC::

Off state output current (included in Ibb(off))

VIN=0,

Tj =-40...+150°C:

Operating current (Pin 2)6), VIN=5 V

Ibb(off)

IL(off)

IGND

--

4

-- 12

--

--

-- 1.2

15 µA

25

10 µA

3 mA

4) At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V

5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω

resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and

circuit diagram page 8.

6) Add IST, if IST > 0, add IIN, if VIN>5.5 V

Infineon Technologies AG

Page 4

2006-Mar-28

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