DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ITS621L1 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
ITS621L1 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PROFET® ITS621L1
GND disconnect with GND pull up
3 IN1
VIN1
6 IN2
VIN2
ST
5
4
Vbb
PROFET
OUT1 1
GND
OUT2
7
2
Vbb
VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
4
3 IN1
high
Vbb
1
OUT1
6 IN2 PROFET
ST
5
GND
OUT2
7
2
Vbb
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive load
Inductive Load switch-off energy
dissipation
E bb
E AS
IN
Vbb
PROFET OUT
=
ST
GND
{L
Z L RL
ELoad
EL
ER
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 :
EAS=
2IL·R· LL·(Vbb
+
|VOUT(CL)|)·
ln
(1+
IL·RL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0
L [mH]
10000
4
3 IN1
high
Vbb
1
OUT1
6 IN2
ST
5
PROFET
GND
OUT2
7
2
1000
D
100
Vbb
10
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Infineon Technologies AG
1
3
5
7
9
11
IL [A]
9
2006-Mar-28

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]