ISPLSI2032VE Ver la hoja de datos (PDF) - Lattice Semiconductor
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ISPLSI2032VE Datasheet PDF : 15 Pages
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Specifications ispLSI 2032VE
Power Consumption
Power consumption in the ispLSI 2032VE device de- used. Figure 3 shows the relationship between power
pends on two primary factors: the speed at which the and operating speed.
device is operating and the number of product terms
Figure 3. Typical Device Power Consumption vs fmax
150
125
ispLSI 2032VE-300 and -225
100
75
ispLSI 2032VE-180
and slower
50
25
0
25 50 75 100 125 150 175 200 225 250 275 300
fmax (MHz)
Notes: Configuration of two 16-bit counters
Typical current at 3.3V, 25° C
ICC can be estimated for the ispLSI 2032VE using the following equation:
For ispLSI 2032VE-300 and -225: ICC(mA) = 4.5 + (# of PTs * 1.29) + (# of nets * Fmax * 0.0068)
For ispLSI 2032VE-180 and slower: ICC(mA) = 4.5 + (# of PTs * 1.05) + (# of nets * Fmax * 0.0068)
Where:
# of PTs = Number of product terms used in design
# of nets = Number of signals used in device
Max freq = Highest clock frequency to the device (in MHz)
The ICC estimate is based on typical conditions (VCC = 3.3V, room temperature) and an assumption of two
GLB loads on average exists. These values are for estimates only. Since the value of ICC is sensitive to
operating conditions and the program in the device, the actual ICC should be verified.
0127A/2032VE
10
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