ISP814G Ver la hoja de datos (PDF) - Isocom
Número de pieza
componentes Descripción
Fabricante
ISP814G Datasheet PDF : 3 Pages
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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
35V
6V
50mA
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2 1.4 V
IF = ± 20mA
Output
Collector-emitter Breakdown (BVCEO) 35
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (ICEO)
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP814, ISP824, ISP844
20
ISP814A, ISP824A, ISP844A
50
Collector-emitter Saturation VoltageVCE (SAT)
V
V
100 nA
300 %
150 %
0.2 V
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance R 5x1010
ISO
Output Rise Time tr
4
Output Fall Time tf
3
VRMS
VPK
Ω
18 μs
18 μs
IC = 1mA
I = 100μA
E
VCE = 20V
± 1mAIF , 5V VCE
± 20mAIF , 1mAIC
See note 1
See note 1
V = 500V (note 1)
IO
VCE = 2V ,
I = 2mA, R = 100Ω
C
L
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
17/7/08
DB91070
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