ISL9V5036S3(2002) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
ISL9V5036S3 Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
3000
2500
FREQUENCY = 1 MHz
2000
1500
CIES
1000
CRES
500
COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
1
VCE = 6V
0
0
10
20
30
40
50
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
360
ICER = 10mA
358
356
354
352
350
348
346
344
342
340
10
TJ = 175°C
TJ = 25°C
100
1000
RG, SERIES GATE RESISTANCE (kΩ)
Figure 15. Breakdown Voltage vs Series Gate Resistance
TJ = - 40°C
2000 3000
100 0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-3
SINGLE PULSE
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-6
10-5
10-4
10-3
10-2
10-1
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002
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