ISL9V5036S3S(2002) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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ISL9V5036S3S Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
V5036S
V5036P
V5036S
Device
ISL9V5036S3S
ISL9V5036P3
ISL9V5036S3
Package
TO-263AB
TO-220AA
TO-262AA
Tape Width
24mm
-
-
Quantity
800
-
-
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
330 360 390
V
BVCES
Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
360 390 420
V
BVECS
Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES Gate to Emitter Breakdown Voltage
IGES = ± 2mA
±12 ±14
-
V
ICER Collector to Emitter Leakage Current VCER = 250V, TC = 25°C
-
RG = 1KΩ,
TC = 150°C -
See Fig. 11
-
25
µA
-
1
mA
IECS Emitter to Collector Leakage Current VEC = 24V, See TC = 25°C
-
Fig. 11
TC = 150°C -
-
1
mA
-
40
mA
R1
Series Gate Resistance
-
75
-
Ω
R2
Gate to Emitter Resistance
10K
-
30K
Ω
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A,
TC = 25°C,
-
VGE = 4.0V See Fig. 4
VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A,
TC = 150°C
-
VGE = 4.5V
Dynamic Characteristics
1.17 1.60
V
1.50 1.80
V
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
Switching Characteristics
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
-
32
IC = 1.0mA, TC = 25°C
1.3
-
VCE = VGE, TC = 150°C 0.75
-
See Fig. 10
-
nC
2.2
V
1.8
V
IC = 10A,
VCE = 12V
-
3.0
-
V
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
VCE = 300V, RL = 46Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
TJ = 25°C, L = 670 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
0.7
4
µs
-
2.1
7
µs
-
4.8
15
µs
-
2.8
15
µs
-
-
500 mJ
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
TO-263, TO-220
-
-
0.6 °C/W
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002
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