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NX25F080A-5T-R Ver la hoja de datos (PDF) - NexFlash -> Winbond Electronics

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NX25F080A-5T-R
NexFlash
NexFlash -> Winbond Electronics NexFlash
NX25F080A-5T-R Datasheet PDF : 25 Pages
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NX25F080A
8M-BIT SERIAL FLASH MEMORY
WITH 4-PIN SPI INTERFACE
PRELIMINARY
JUNE 1999
FEATURES
• Flash Storage for Resource-Limited Systems
– Ideal for portable/mobile and microcontroller-based
applications that store data, voice, and images
• NexFlash Non-volatile Memory Technology
– Patented single transistor EEPROM memory
– High-density, low-voltage & power, cost-effective
– Small DOS compatible sectors, 512+24 bytes
– 10K/100K write cycles, ten years data retention
• Ultra-low Power for Battery-Operation
– Single 5V or 3V supply for Read, Erase/Write
– Low frequency read command for very low power
– 1 µA standby current, 5 mA active @ 3V (typical)
– No pre-erase. Erase/Write time of 5 ms/sector @5V
(typical) ensures efficient battery use
• 4-pin SPI Serial Interface
– Easily interfaces to popular microcontrollers
– Clock operation as fast as 16 MHz
• On-chip Serial SRAM
– Dual 536-byte Read/Write SRAM buffers
– Use in conjunction with or independent of Flash
– Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
– Byte-level addressing
– Transfer or compare sector to SRAM
– Versatile hardware and software write-protection
– Alternate oscillator frequency for EMI sensitive
applications.
– In-system electronic part number identification
– Removable Serial Flash Module package option
– Serial Flash Development Kit
DESCRIPTION
The NX25F080A Serial Flash memory provides a storage
solution for systems limited in power, pins, space,
hardware, and firmware resources. They are ideal for
media-storage applications that store data, voice, and
images in a portable or mobile environment. Using
NexFlashs patented single transistor EEPROM cell, the
NX25F080A offers a high-density, low-voltage, low-power,
and cost-effective non-volatile memory solution. The
NX25F080A operates on a single 5V or 3V (2.7V-3.6V)
supply for Read and Erase/Write with typical current con-
sumption as low as 5 mA active and less than 1 µA standby.
Sector Erase/Write speeds as fast as 5 ms increase
system performance, minimize power-on time, and
maximize battery life.
The NX25F080A has 8M-bits of flash memory organized
as 2,048 DOS-compatible sectors of 536 bytes each.
Each sector is individually addressable through basic
serial-clocked commands. The 4-pin SPI serial interface
works directly with popular microcontrollers. Special features
include: serial SRAM, byte-level addressing,
double-buffered sector writes, transfer or compare sector
to SRAM, versatile hardware and software write protec-
tion, user-selected oscillator frequency, electronic part
number, and removable Serial Flash Module package
option. Development is supported with the PC-based
Serial Flash Development Kit.
This document contains PRELIMINARY INFORMATION. NexFlash reserves the right to make changes to its product at any time without notice in order to improve design and supply the best
possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 1998, NexFlash Technologies, Inc.
NexFlash Technologies, Inc.
1
PRELIMINARY NXSF005C-0699
06/11/99 ©

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