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Fabricante

NX26F160A-5TE-R

8M-BIT AND 16M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE

NexFlash -> Winbond Electronics 

NX26F080A

NX26F160

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Vcc

VIN, VOUT

TSTG

TLEAD

Parameter

Supply Voltage

Voltage Applied to Any Pin

Storage Temperature

Lead Temperature

Conditions

Range

Unit

0 to 7.0

V

Relative to Ground

–0.5 to Vcc + 0.6

V

–65 to +150

°C

Soldering, Ten Seconds

+300

°C

Note:

1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not

guaranteed. Exposure beyond absolute maximum ratings (listed above) may cause permanent damage

OPERATING RANGES

Symbol

Parameter

Conditions

Min

Vcc

Supply Voltage

26F080A-5T-R 26M080A-5T-R

4.5

26F080A-3T-R 26M080A-3T-R

2.7

26F160-5T-R

26M160-5T-R

4.5

26F160-3T-RS1 26M160-3T-R

3.0

26F160-3T-R

2.85

TA

Ambient Temperature, Commercial

0

Operating

Extended(1)

–15

Industrial(1)

–40

Max

Unit

5.5

V

3.6

V

5.5

V

3.6

V

3.6

V

+70

°C

+80

°C

+85

°C

Note:

1. Contact NexFlash for availability of extended or industrial grade devices.

DC ELECTRICAL CHARACTERISTICS

Symbol

VIL

VIH

VOL

VOH

VOLC

VOHC

ILI

IOL

ICC (active)

Parameter

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

Output Low Voltage CMOS(1)

Output High Voltage CMOS(1)

Input Leakage

I/O Leakage

Active Power Supply Current(2)

ICCSB (standby) Standby Power Supply Current

CIN

Input Capacitance(1)

COUT

Output Capacitance(1)

Conditions

Min

–0.4

Vcc x 0.6

IOL = 2 mA, VCC = 4.5V

—

IOH = –400 µA, VCC = 4.5V

2.4

VCC = Min, IOL = 10 µA

—

VCC = Min, IOH = –10 µA

VCC – 0.3

0 < VIN < Vcc

–10

0 < VIN < Vcc, Output Disabled –10

fCLK ≤ 8 MHz (1/tCP)

VCC = 4.5V to 5.5V

—

VCC = 2.7V to 3.6V (NX26F080A) —

VCC = 2.85V to 3.6V (NX26F160) —

SIO = 0V or VCC,

—

SCK = 0V

TA = 25°C, VCC = 5V or 3V

—

Frequency = 1 MHz

TA = 25°C, VCC = 5V or 3V

—

Frequency = 1 MHz

Typ

Max

Unit

— Vcc x 0.2 V

— Vcc + 0.5 V

—

0.45

V

—

—

V

—

0.15

V

—

—

V

—

+10

µA

—

+10

µA

15

30

mA

5

10

10

20

<1

10

µA

—

10

pF

—

10

pF

Notes:

1. Tested on a sample basis or specified via design or characterization data.

2. The device leaves “standby” power consumption after the clock transitions from low-to-high. Full “active” power consumption

starts after the correct device address has been decoded during a sector read or write sequence.

10

NexFlash Technologies, Inc.

PRELIMINARY NXSF006E-0801

08/22/01 ©

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