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IS41LV16257B-35K

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

Integrated Silicon Solution 

IS41LV16257B

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameters

Rating

Unit

VT

Voltage on Any Pin Relative to GND 3.3V –0.5 t0 +4.6

V

VDD

Supply Voltage

3.3V –0.5 t0 +4.6

V

IOUT

Output Current

50

mA

PD

Power Dissipation

1

W

TA

Operation Temperature

Com.

0 to +70

°C

TSTG

Storage Temperature

–55 to +125

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-

nent damage to the device. This is a stress rating only and functional operation of the device

at these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND)

Symbol

VDD

VIH

VIL

TA

Parameter

Voltage Min.

Supply Voltage

3.3V

3.0

Input High Voltage

3.3V

2.0

Input Low Voltage

3.3

–0.3

Ambient Temperature Com.

0

Typ.

Max.

Unit

3.3

3.6

V

— VDD + 0.3

V

—

0.8

V

—

70

°C

ISSI ®

CAPACITANCE(1,2)

Symbol Parameter

Max.

Unit

CIN1

Input Capacitance: A0-A8

CIN2

Input Capacitance: RAS, UCAS, LCAS, WE, OE

CIO

Data Input/Output Capacitance: I/O0-I/O15

5

pF

7

pF

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD=3.3V ± 10%.

Integrated Silicon Solution, Inc. — 1-800-379-4774

5

Rev. B

04/22/05

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