IS25C128A Ver la hoja de datos (PDF) - Integrated Silicon Solution

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IS25C128A

128K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM

Integrated Silicon Solution 

IS25C128A

ABSOLUTE MAXIMUM RATINGS (1)

Symbol Parameter

Value

Unit

VS

VP

TBIAS

TSTG

IOUT

Supply Voltage

Voltage on Any Pin

Temperature Under Bias

Storage Temperature

Output Current

-0.5 to + 6.5

V

–0.5 to Vcc + 0.5 V

–55 to +125

°C

–65 to +150

°C

5

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-

nent damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions outside those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

POWER SUPPLY CHARACTERISTICS

TA = –40°C to +85°C

Symbol Parameter

ICC1

Operating Current

ICC2

Operating Current

ICC3

Operating Current

ISB1

Standby Current

ISB2

Standby Current

ISB3

Standby Current

Test Conditions

Read/Write at 10 MHz (Vcc = 5V)

Read/Write at 5 MHz (Vcc = 2.5V)

Read/Write at 5 MHz (Vcc = 1.8V)

Vcc = 5.0V, VIN = VCC or GND, CS = Vcc

Vcc = 2.5V, VIN = VCC or GND, CS = Vcc

Vcc = 1.8V, VIN = VCC or GND, CS = Vcc

Min. Max.

Unit

— 10.0

mA

— 4.0

mA

— 3.0

mA

— 25

µA

— 20

µA

— 15

µA

CAPACITANCE(1,2)

Symbol

CIN

COUT

Parameter

Input Capacitance

Output Capacitance

Conditions

VIN = 0V

VOUT = 0V

Max.

6

8

Unit

pF

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters and not 100%

tested.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.

Integrated Silicon Solution, Inc.

7

AdvancedInformation Rev. 00E

11/25/08

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