DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IS25C08B Ver la hoja de datos (PDF) - Integrated Silicon Solution

Número de pieza
componentes Descripción
Fabricante
IS25C08B
ISSI
Integrated Silicon Solution ISSI
IS25C08B Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IS25C08B
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
Vs
Supply Voltage
-0.5 to + 6.5
V
Vp
Voltage on Any Pin
–0.5 to Vcc + 0.5 V
Tbias
Temperature Under Bias
–55 to +125
°C
Tstg
Storage Temperature
–65 to +150
°C
Iout
Output Current
5
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions outside those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE (IS25C08B-2)
Range
Ambient Temperature
Vcc
Industrial
–40°C to +85°C
1.8V to 5.5V
Note: ISSI offers Industrial grade for Commercial applications (0oC to +70oC).
CAPACITANCE(1,2)
Symbol
Cin
Cout
Parameter
Input Capacitance
Output Capacitance
Conditions
Vin = 0V
Vout = 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters and
not 100% tested.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vcc = 5.0V.
Integrated Silicon Solution, Inc.
7
Preliminary Information  Rev.  00A
08/25/09

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]