MT4LC4M4E9TG-5 Ver la hoja de datos (PDF) - Micron Technology
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MT4LC4M4E9TG-5 Datasheet PDF : 23 Pages
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TECHNOLOGY, INC.
4 MEG x 4
EDO DRAM
Icc OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 2, 3)
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = VIH)
STANDBY CURRENT: CMOS (non-S version only)
(RAS# = CAS# = other inputs = VCC -0.2V)
STANDBY CURRENT: CMOS (S version only)
(RAS# = CAS# = other inputs = VCC -0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling: tRC = tRC [MIN])
OPERATING CURRENT: EDO PAGE MODE
Average power supply current (RAS# = VIL,
CAS#, address cycling: tPC = tPC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = VIH: tRC = tRC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling: tRC = tRC [MIN])
REFRESH CURRENT: Extended (S version only)
Average power supply current: CAS# = 0.2V or
CBR cycling; RAS# = tRAS (MIN); WE# =
VCC -0.2V; A0-A11,OE# and DIN = VCC -0.2V or
0.2V (DIN may be left open)
REFRESH CURRENT: Self (S version only)
Average power supply current: CBR with
RAS# ≥ tRASS (MIN) and CAS# held LOW; WE# =
VCC -0.2V; A0-A11, OE# and DIN = VCC -0.2V
or 0.2V (DIN may be left open)
3.3V
5V
2K
4K
2K
4K
SYM SPEED Refresh Refresh Refresh Refresh UNITS NOTES
ICC1 ALL
1
1
1
1
mA
ICC2 ALL 500 500 500 500 µA
ICC2 ALL 150 150 150 150 µA
-5 110 90 140 120 mA 5, 6
ICC3
-6
100
80
130 110
-5 110 100 110 100 mA 5, 6
ICC4
-6
100
90
100
90
-5 110 90 140 120 mA 5, 6
ICC5
-6
100
80
130 110
-5 110 90 140 120 mA 5, 7
ICC6
-6
100
80
130 110
ALL 300 300 300 300 µA 5, 7
ICC7
tRC 62.5 31.25 62.5 31.25 µs
25
ICC8 ALL 300 300 300 300 µA 5, 7
4 Meg x 4 EDO DRAM
D47.pm5 – Rev. 3/97
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1997, Micron Technology, Inc.
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