IRLR8726PBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRLR8726PBF

HEXFET

Power MOSFET

International Rectifier 

IRLR/U8726PbF

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

+

‚

-



RG

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

D.U.T. ISD Waveform

Reverse

-„ +

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

*

• dv/dt controlled by RG

• Driver same type as D.U.T.

VDD

Re-Applied

** + Voltage

Body Diode Forward Drop

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** VGS = 5V for Logic Level Devices

V*G*S*=10V

VDD

ISD

Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

Id

Vgs

L

VCC

DUT

0

210K

S

Vds

Vgs(th)

Fig 15. Gate Charge Test Circuit

www.irf.com

Qgodr

Qgd Qgs2 Qgs1

Fig 16. Gate Charge Waveform

7

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