IRLR8726TRPBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRLR8726TRPBF

HEXFET

Power MOSFET

International Rectifier 

IRLR/U8726PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

RG

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

30

–––

–––

–––

1.35

–––

–––

–––

–––

–––

73

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

20

4.0

5.8

1.80

-8.6

–––

–––

–––

–––

–––

15

3.7

1.9

5.7

3.7

7.6

10

2.0

12

49

15

16

2150

480

205

–––

–––

5.8

8.0

2.35

–––

V VGS = 0V, ID = 250µA

mV/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 25A

e VGS = 4.5V, ID = 20A

V VDS = VGS, ID = 50µA

mV/°C

1.0

150

100

-100

–––

23

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

S VDS = 15V, ID = 20A

–––

VDS = 15V

––– nC VGS = 4.5V

–––

ID = 20A

–––

See Fig. 15

–––

––– nC VDS = 15V, VGS = 0V

3.5 Ω

–––

e VDD = 15V, VGS = 4.5V

–––

ID = 20A

––– ns RG = 1.8Ω

–––

See Fig. 13

–––

VGS = 0V

––– pF VDS = 15V

–––

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

IAR

d Single Pulse Avalanche Energy

Ù Avalanche Current

Typ.

–––

–––

Max.

120

20

Units

mJ

A

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min. Typ. Max. Units

Conditions

f ––– ––– 86

MOSFET symbol

A showing the

––– ––– 340

integral reverse

––– ––– 1.0

––– 24 36

––– 52 78

p-n junction diode.

e V TJ = 25°C, IS = 20A, VGS = 0V

ns TJ = 25°C, IF = 20A, VDD = 15V

e nC di/dt = 300A/µs

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