IRLR/U7843PbF
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
โฮVDSS/โTJ
RDS(on)
VGS(th)
โVGS(th)/โTJ
Drain-to-Source Breakdown Voltage
30 โโโ โโโ V VGS = 0V, ID = 250ยตA
Breakdown Voltage Temp. Coefficient โโโ
Static Drain-to-Source On-Resistance โโโ
โโโ
19
2.6
3.2
โโโ
3.3
4.0
mV/ยฐC Reference to 25ยฐC, ID = 1mA
e mโฆ VGS = 10V, ID = 15A
e VGS = 4.5V, ID = 12A
Gate Threshold Voltage
1.5 โโโ 2.3 V VDS = VGS, ID = 250ยตA
Gate Threshold Voltage Coefficient
โโโ -5.4 โโโ mV/ยฐC
IDSS
Drain-to-Source Leakage Current
โโโ โโโ 1.0 ยตA VDS = 24V, VGS = 0V
โโโ โโโ 150
VDS = 24V, VGS = 0V, TJ = 125ยฐC
IGSS
Gate-to-Source Forward Leakage
โโโ โโโ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
โโโ โโโ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
37 โโโ โโโ
โโโ 34 50
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
โโโ 9.1 โโโ
VDS = 15V
โโโ 2.5 โโโ nC VGS = 4.5V
โโโ 12 โโโ
ID = 12A
โโโ 10 โโโ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
โโโ 15 โโโ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
โโโ
โโโ
21
25
โโโ
โโโ
e nC VDS = 15V, VGS = 0V
VDD = 15V, VGS = 4.5V
โโโ 42 โโโ
ID = 12A
โโโ 34 โโโ ns Clamped Inductive Load
tf
Fall Time
โโโ 19 โโโ
Ciss
Input Capacitance
โโโ 4380 โโโ
VGS = 0V
Coss
Output Capacitance
โโโ 940 โโโ pF VDS = 15V
Crss
Reverse Transfer Capacitance
โโโ 430 โโโ
ฦ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
รย Avalanche Current
ย Repetitive Avalanche Energy
Typ.
โโโ
โโโ
โโโ
Max.
1440
12
14
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
f Min. Typ. Max. Units
Conditions
โโโ โโโ 161
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
รย (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
โโโ โโโ 620
A showing the
integral reverse
โโโ โโโ 1.0
e p-n junction diode.
V TJ = 25ยฐC, IS = 12A, VGS = 0V
โโโ 39
โโโ 36
59
54
e ns TJ = 25ยฐC, IF = 12A, VDD = 15V
nC di/dt = 100A/ยตs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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