IRL2203NS Ver la hoja de datos (PDF) - Unspecified

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componentes Descripción

Fabricante

IRL2203NS

Power MOSFET

Unspecified 

IRL2203NS/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min Typ Max Units

Conditions

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

30 ––– ––– V VGS = 0V, ID = 250µA

––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 7.0

f VGS = 10V, ID = 60A

––– ––– 10

f VGS = 4.5V, ID = 48A

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

1.0 ––– 3.0

73 ––– –––

V VDS = VGS, ID = 250µA

f S VDS = 25V, ID = 60A

IDSS

Drain-to-Source Leakage Current

––– ––– 25

VDS = 30V, VGS = 0V

µA

––– ––– 250

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 16V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -16V

Qg

Total Gate Charge

––– ––– 60

ID = 60A

Qgs

Gate-to-Source Charge

––– ––– 14 nC VDS = 24V

Qgd

Gate-to-Drain ("Miller") Charge

––– ––– 33

VGS = 4.5V, See Fig. 6 and 13

RG

Gate Resistance

0.2 ––– 3.0 Ω

td(on)

Turn-On Delay Time

––– 11 –––

VDD = 15V

tr

Rise Time

––– 160 –––

ID = 60A

td(off)

tf

Turn-Off Delay Time

Fall Time

––– 23 –––

––– 66 –––

RG = 1.8Ω

f VGS = 4.5V, See Fig. 10

LD

Internal Drain Inductance

LS

Internal Source Inductance

––– 4.5 –––

Between lead,

Nh 6mm (0.25in.)

––– 7.5 –––

from package

and center of die contact

Ciss

Input Capacitance

––– 3290 –––

VGS = 0V

Coss

Output Capacitance

––– 1270 ––– pF VDS = 25V

Crss

EAS

Reverse Transfer Capacitance

d Single Pulse Avalanche Energy

––– 170 –––

ƒ = 1.0MHz, See Fig. 5

g h ––– 1320 290

mJ IAS = 60A, L = 0.16mH

Source-Drain Ratings and Characteristics

Symbol

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω,

IAS = 60A, VGS=10V (See Figure 12)

ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

Min Typ Max Units

Conditions

i ––– ––– 116

MOSFET symbol

A showing the

––– ––– 400

––– ––– 1.2

integral reverse

p-n junction diode.

f V TJ = 25°C, IS = 60A, VGS = 0V

–––

–––

56

110

84

170

f ns TJ = 25°C, IF = 60A

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

… This is a typical value at device destruction and represents

operation outside rated limits.

† This is a calculated value limited to TJ = 175°C .

‡ Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniques refer to

application note #AN-994.

‰ Rθ is measured at TJ approximately 90°C

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