IRK.71 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRK.71

ADD-A-pak™ GEN V Power Modules

International Rectifier 

Triggering

IRK.71, .91 Series

Bulletin I27132 rev. H 10/02

Parameters

PGM Max. peak gate power

PG(AV) Max. average gate power

IGM

-VGM

Max. peak gate current

Max. peak negative

gate voltage

VGT Max. gate voltage

required to trigger

IGT Max. gate current

required to trigger

VGD Max. gate voltage

that will not trigger

IGD Max. gate current

that will not trigger

Blocking

IRK.71

12

3.0

3.0

IRK.91

12

3.0

3.0

10

4.0

2.5

1.7

270

150

80

0.25

6

Units Conditions

W

A

V

TJ = - 40°C

Anode supply = 6V

TJ = 25°C

resistive load

TJ = 125°C

TJ = - 40°C

Anode supply = 6V

mA

TJ = 25°C

resistive load

TJ = 125°C

V

TJ = 125oC,

rated VDRM applied

mA

TJ = 125oC,

rated VDRM applied

Parameters

IRK.71

IRK.91

Units

IRRM Max. peak reverse and

IDRM off-state leakage current

15

mA

at VRRM, VDRM

2500 (1 min)

VINS RMS isolation voltage

3500 (1 sec)

V

dv/dt Max. critical rate of rise

500

of off-state voltage (5)

V/µs

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.

Thermal and Mechanical Specifications

Conditions

TJ = 125 oC, gate open circuit

50 Hz, circuit to base, all terminals

shorted

TJ = 125oC, linear to 0.67 VDRM,

gate open circuit

Parameters

IRK.71

IRK.91

Units

Conditions

TJ Junction operating

temperature range

Tstg

RthJC

Storage temp. range

Max. internal thermal

resistance, junction

to case

RthCS Typical thermal resistance

case to heatsink

T Mounting torque ± 10%

to heatsink

busbar

wt Approximate weight

- 40 to 125

- 40 to 125

0.165

0.135

0.1

5

3

110 (4)

°C

K/W

Nm

gr (oz)

Per module, DC operation

Mounting surface flat, smooth and greased

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the

spread of the compound

Case style

TO-240AA

JEDEC

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

Devices

180o

Sine half wave conduction

120o

90o

60o

30o

Rect. wave conduction

180o

120o

90o

60o

30o

Units

IRK.71

0.06

0.07

0.09

0.12

0.18

0.04

0.08

0.10

0.13

0.18

°C/W

IRK.91

0.04

0.05

0.06

0.08

0.12

0.03

0.05

0.06

0.08

0.12

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