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IS25F011A

1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

Integrated Silicon Solution 

IS25F011A

IS25F021A

IS25F041A

Serial Flash Memory Array

The IS25F011A, IS25F021A, and IS25F041A Serial Flash

memory arrays are organized as 512, 1024, and 2048

sectors of 264-bytes (2,112 bits) each, as shown in Figure

4. Grouping sectors as pairs offer a convenient format for

applications that store and transfer data in a DOS compat-

ible sector size of 512-bytes. The additional 16-bytes per

sector pair can be used for sector management such as

header, checksum, CRC, or other related application

requirements.

The Serial Flash memory of the IS25F011A, IS25F021A,

and IS25F041A is byte-addressable. That is, each sector

is individually addressable and each byte within a sector

is individually addressable. This allows a single byte, or

specified sequence of bytes, to be read without having to

clock an entire 264-byte sector out of the device. Data can

be read directly from a sector in the Flash memory array

by using a Read from Sector command from the SPI bus.

Data can be written to a sector in the Flash memory array

by means of the Serial SRAM using a Write to Sector

command or a Transfer SRAM to Sector command.

ISSI ®

After a sector has been written, the memory array will

become busy while it is programming the specified non-

volatile memory cells of that sector. This busy time will not

exceed tWP (~5 ms for 5V devices), during which time the

Flash array is unavailable for read or write access. The

device can be tested to determine the array’s availabil-

ity using the Ready/Busy status that is available during

most read commands, via the status register, or on the

Ready/Busy pin. Note that the SRAM is always available,

even when the memory array is busy. See the Serial

SRAM section for more details.

The IS25F011A, IS25F021A, and IS25F041A do not

require pre-erase. Instead, the device incorporates an

auto-erase-before-write feature that automatically erases

the addressed sector at the beginning of the write opera-

tion. This allows for fast and consistent programming

times. It also simplifies firmware support by eliminating

the need for a separate pre-erase algorithm and the

complex management of disproportional erase and write

block sizes commonly found in other devices.

Sector Address:

25F011

S[8:0]

25F021

S[9:0]

25F041

S[10:0]

Sector 511

1FFH

Sector 1023 Sector 2047

3FFH

7FFH

Sector 510

1FEH

Sector 1022 Sector 2046

3FEH

7FEH

Byte 0

000H

Byte 0

000H

Byte Address: B[8:0]

Byte1

001H

Byte1

001H

Byte 2-261

002H-105H

Byte 2-261

002H-105H

Byte 262 Byte 263

106H

107H

Byte 262 Byte 263

106H

107H

Sector 2-509 Sector 2-1021 Sector 2-2045

002H-1FDH 002H-3FDH 002H-7FDH

1M-bit, 2M-bit, or 4M-bit Serial Flash Memory Array

512, 1024, and 2048 Byte-Addressable Sectors

of 264-Bytes each

Sector 1

001H

Sector 0

000H

Sector 1

001H

Sector 0

000H

Sector 1

001H

Sector 0

000H

Byte 0

000H

Byte 0

000H

Byte 1

001H

Byte 1

001H

Byte 2-261

002H-105H

Byte 2-261

002H-105H

Byte 262 Byte 263

106H

107H

Byte 262 Byte 263

106H

107H

Figure 4. IS25F011A, IS25F021A, and IS25F041A Serial Flash Memory Array

4

Integrated Silicon Solution, Inc.

PRELIMINARY SF001-1A

06/24/98

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