IRHM3260 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IRHM3260 Datasheet PDF : 8 Pages
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Pre-Irradiation
IRHM7260
10000
8000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
Coss
2000
Crss
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
0
SEE FIGURE 13
0
40
80
120 160 200 240
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD ,Source-to-Drain Voltage (V)
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100us
10
1ms
10ms
TC
TJ
=
=
25 ° C
150 ° C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5
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