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IRHNA7264SE Datasheet PDF : 4 Pages
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Provisional Data Sheet No. PD-9.1432A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHNA7264SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
250Volt, 0.110Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under identical pre- and post-radiation test
conditions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 105
Rads (Si) total dose. No compensation in gate drive cir-
cuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 1012
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Since the SEE process utilizes In-
ternational Rectifier’s patented HEXFET technology, the
user can expect the highest quality and reliability in the
industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
Part Number
IRHNA7264SE
BVDSS
250V
RDS(on)
ID
0.110Ω 34A
Features:
s Radiation Hardened up to 1 x 105 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s RepetitiveAvalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Lightweight
Absolute Maximum Ratings
Pre-Radiation
ID @ VGS = 12V, TC = 25oC
ID @ VGS = 12V, TC = 100oC
IDM
PD @ TC = 25oC
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Â
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt ÂŽ
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNA7264SE
34
21
136
300
2.4
±20
500
34
30
4.0
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Units
A
W
W/KÂ
V
mJ
A
mJ
V/ns
oC
g
To Order
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