IRHN4230 Ver la hoja de datos (PDF) - International Rectifier

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IRHN4230

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-1)

International Rectifier 

PRraed-iIarrtiaodniaCtihoanracteristics

Note: Bias Conditions during radiation: V/5 = 0 Vdc, V,5 = 160 Vdc

IRHN7230

Fig 13. Typical Output Characteristics

Pre-Irradiation

Fig 14. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 15. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

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Fig 16. Typical Output Characteristics

Post-Irradiation 1 Mega Rads (Si)

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