IRHN4230 Ver la hoja de datos (PDF) - International Rectifier
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IRHN4230 Datasheet PDF : 12 Pages
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PD - 90822C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-1)
IRHN7230
200V, N-CHANNEL
RAD Hard HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHN7230
100K Rads (Si) 0.40Ω
IRHN3230
300K Rads (Si) 0.40Ω
IRHN4230
600K Rads (Si) 0.40Ω
IRHN8230
1000K Rads (Si) 0.40Ω
ID
9.0A
9.0A
9.0A
9.0A
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
SMD-1
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
! Surface Mount
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
9.0
6.0
A
36
75
W
0.60
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
±20
330
9.0
7.5
5.0
-55 to 150
300 ( for 5s)
2.6 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
8/10/01
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