IRHM7264SE(1996) Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IRHM7264SE Datasheet PDF : 4 Pages
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IRHM7264SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
250
—
—
—
2.5
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—— V
— — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.087
— 0.097
— 4.5
——
— 50
— 250
— 100
— -100
— 185
— 55
— 180
— 35
— 200
— 140
— 75
8.7 —
8.7 —
7800 —
1250 —
550 —
Ω
VGS = 12V, ID = 22.8A
VGS = 12V, ID = 35A
V
VDS = VGS, ID = 1.0 mA
S( )
VDS > 15V, IDS = 22.8A
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
nC
VDS = Max. Rating x 0.5
VDD = 125V, ID = 35A,
ns
RG = 2.35Ω
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
pF
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
Min. Typ. Max. Units
Test Conditions
——
35
A Modified MOSFET symbol showing the
— — 140
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB Junction-to-Ambient
RthCS
Case-to-Sink
— — 1.4 V
— — 875 ns
— 12 — µC
Tj = 25°C, IS = 35A, VGS = 0V
Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
VDD ≤ 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 0.5
K/W
— — 48
— 0.21 —
Test Conditions
Typical socket mount
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