IRGBC40 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
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IRGBC40 Datasheet PDF : 6 Pages
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IRGBC40K
2500
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
2000
Coes = C ce + C gc
Cies
1500
Coes
1000
500
Cres
0
A
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
2.2
VCC = 480V
VGE = 15V
2.1
TC
IC
= 25°C
= 25A
2.0
1.9
1.8
1.7
1.6
0
A
10
20
30
40
50
60
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 25A
16
12
8
4
0
A
0
20
40
60
80
Qg, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
I C = 50A
IC = 25A
1
IC = 13A
RG = 10Ω
VGE = 15V
0.1 VCC = 480V
-60 -40 -20 0
A
20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-853
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