HYM364035GS-60 Ver la hoja de datos (PDF) - Infineon Technologies

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HYM364035GS-60

4M × 36-Bit EDO-DRAM Module

Infineon Technologies 

4M × 36-Bit EDO-DRAM Module

HYM 364035S/GS-60

Advanced Information

• 4 194 304 words by 36-Bit organization

• Fast access and cycle time

60 ns RAS access time

15 ns CAS access time

104 ns cycle time

• Hyper page mode (EDO) capability

25 ns cycle time

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 7260 mW active

CMOS – 66 mW standby

TTL – 132 mW standby

• CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

• 12 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height

• Utilizes 12 4M x 3 DRAM’s in 300 mil SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write parity applications

• Tin-Lead contact pads (HYM 364035S-60)

• Gold contact pads (HYM 364035GS-60)

Semiconductor Group

1

4.96

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