HYM364020GS-60 Ver la hoja de datos (PDF) - Infineon Technologies
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HYM364020GS-60 Datasheet PDF : 10 Pages
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4M x 36-Bit EDO - DRAM Module
HYM364025S/GS-50/-60
• SIMM modules with 4 194 304 words by 36-Bit organization
for PC main memory applications
• Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
• Hyper Page Mode (EDO) capability
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 6820 mW active (-50 version)
max. 6160 mW active (-60 version)
CMOS – 66 mW standby
TTL –132 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height
• Utilizes eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write parity applications
• Tin-Lead contact pads (S-version)
• Gold contact pads (GS - version)
Semiconductor Group
1
4.97
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