HYB514100BJ-60 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

HYB514100BJ-60

4M×1-Bit Dynamic RAM

Infineon Technologies 

HYB 514100BJ-50/-60

4M × 1 DRAM

DC Characteristics (cont’d)

TA = 0 to 70 °C, VSS = 0 V, VCC = 5 10 %, tT = 5 ns

Parameter

Symbol

Limit Values

min.

max.

Standby VCC supply current

ICC5

–

1

Average VCC supply current during

ICC6

CAS-before-RAS refresh mode

-50 version

–

120

-60 version

–

110

Unit Test

Condition

mA 1

2

mA

mA

Capacitance

TA = 0 to 70 °C, VCC = 5.0 V ± 10 %, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A10, DI)

Input capacitance (RAS, CAS, WE)

Output capacitance (DO)

CI1

–

5

pF

CI2

–

7

pF

CIO

–

7

pF

AC Characteristics 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 %, tT = 5 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Common Parameters

Random read or write cycle time

RAS precharge time

RAS pulse width

CAS pulse width

Row address setup time

Row address hold time

Column address setup time

Column address hold time

RAS to CAS delay time

RAS to column address delay time

RAS hold time

CAS hold time

tRC

95 –

110 –

ns

tRP

35 –

40 –

ns

tRAS

50 10k 60 10k ns

tCAS

13 10k 15 10k ns

tASR

0–

0

–

ns

tRAH

8–

10 –

ns

tASC

0–

0

–

ns

tCAH

10 –

15 –

ns

tRCD

18 37 20 45 ns

tRAD

13 25 15 30 ns

tRSH

13

15 –

ns

tCSH

50

60 –

ns

Semiconductor Group

5

1998-10-01

Share Link: