HYB314100BJ-50 Ver la hoja de datos (PDF) - Infineon Technologies
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Fabricante
HYB314100BJ-50 Datasheet PDF : 21 Pages
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HYB 514100BJ-50/-60
4M × 1 DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 °C
Storage temperature range.................................................................................... – 55 to + 150 °C
Input/output voltage ....................................................................................................... – 1 to + 7 V
Power Supply voltage .................................................................................................... – 1 to + 7 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings†may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current, any input
II(L)
(0 V < VIN < 7, all other input = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 < VOUT < VCC)
Average VCC supply current
ICC1
-50 version
-60 version
2.4
– 1.0
2.4
–
– 10
– 10
–
–
VCC + 0.5 V 1
0.8
V
1
–
V
1
0.4
V
1
10
µA 1
10
µA 1
120
mA 2, 3
110
mA
Standby VCC supply current
(RAS = CAS = WE = VIH)
ICC2
–
Average VCC supply current during RAS-only ICC3
refresh cycles
-50 version
–
-60 version
–
2
mA
120
mA 2
110
mA
Average VCC supply current during fast page ICC4
mode operation
-50 version
–
-60 version
–
80
mA 2, 3
70
mA
Semiconductor Group
4
1998-10-01
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