HYB314100BJL-70 Ver la hoja de datos (PDF) - Infineon Technologies

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HYB314100BJL-70

4M×1-Bit Dynamic RAM

Infineon Technologies 

4M × 1-Bit Dynamic RAM

HYB 514100BJ-50/-60

Advanced Information

• 4 194 304 words by 1-bit organization

• 0 to 70 °C operating temperature

• Fast Page Mode Operation

• Performance:

tRAC RAS access time

tCAC CAS access time

tAA Access time from address

tRC Read/Write cycle time

tPC Fast page mode cycle time

-50 -60

50 60 ns

13 15 ns

25 30 ns

95 110 ns

35 40 ns

• Single + 5 V (± 10 %) supply with a built-in VBB generator

• Low power dissipation

max. 660 mW active (-50 version)

max. 605 mW active (-60 version)

• Standby power dissipation:

11 mW max. standby (TTL)

5.5 mW max. standby (CMOS)

• Output unlatched at cycle end allows two-dimensional chip selection

• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,

hidden refresh and test mode capability

• All inputs and outputs TTL-compatible

• 1024 refresh cycles/16 ms

• Plastic Packages: P-SOJ-26/20-2 with 300 mil width

Semiconductor Group

1

1998-10-01

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