IRFR220(2015) Ver la hoja de datos (PDF) - Vishay Semiconductors
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Fabricante
IRFR220 Datasheet PDF : 11 Pages
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www.vishay.com
IRFR220, IRFU220, SiHFR220, SiHFU220
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
14
3.0
7.9
Single
DPAK
(TO-252)
IPAK
(TO-251)
D
D
G
0.80
D
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface mount (IRFR220, SiHFR220)
• Straight lead (IRFU220, SiHFU220)
• Available in tape and reel
Available
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR220-GE3
IRFR220PbF
Note
a. See device orientation.
DPAK (TO-252)
SiHFR220TRL-GE3
IRFR220TRLPbF a
DPAK (TO-252)
-
IRFR220TRPbF a
DPAK (TO-252)
-
IRFR220TRRPbF a
IPAK (TO-251)
SiHFU220-GE3
IRFU220PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 4.8 A (see fig. 12).
c. ISD 5.2 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
200
± 20
4.8
3.0
19
0.33
0.020
161
4.8
4.2
42
2.5
5.0
-55 to +150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-2678-Rev. F, 16-Nov-15
1
Document Number: 91270
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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