IRFS730A Ver la hoja de datos (PDF) - Fairchild Semiconductor
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IRFS730A Datasheet PDF : 7 Pages
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IRFS730A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
1. V = 10 V
0.5
GS
2. ID = 2.75 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
102
Operation in This Area
is Limited by R DS(on)
101
1 ms
100 µs
10 ms
100 ms
100
DC
@ Notes :
10-1
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
4
3
2
1
0
25
50
75
100
125
150
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
D=0.5
100
0.2
0.1
0.05
10- 1
0.02
0.01
10- 2
10- 5
@ Notes :
1. Zθ J C (t)=3.31 o C/W Max.
2. Duty Factor, D=t1 /t2
3. TJ M-TC =PD M *Zθ J C (t)
single pulse
PDM
t1
t2
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration [sec]
©1999 Fairchild Semiconductor Corporation
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