IRFS730A Ver la hoja de datos (PDF) - Fairchild Semiconductor
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IRFS730A Datasheet PDF : 7 Pages
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IRFS730A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
∆ BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage 400 -- -- V VGS=0V,ID=250 µ A
Breakdown Voltage Temp. Coeff. -- 0.52 -- V/ΟC ID=250 µA See Fig 7
Gate Threshold Voltage
2.0 -- 4.0 V VDS=5V,ID=250 µ A
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
-- -- 100 nA VGS=30V
-- -- -100
VGS=-30V
-- -- 10
VDS=400V
Drain-to-Source Leakage Current -- -- 100 µ A VDS=320V,TC=125ΟC
Static Drain-Source
On-State Resistance
-- -- 1.0 Ω VGS=10V,ID=1.95A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 3.44 -- Ω VDS=50V,ID=1.95A
O4
-- 675 880
-- 95 110 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 43 52
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 15 40
-- 18 50
VDD=200V,ID=5.5A,
-- 62 140 ns RG=12 Ω
-- 22 60
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 32 42
-- 4.6 --
-- 16.6 --
VDS=320V,VGS=10V,
nC ID=5.5A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
IS
Continuous Source Current
ISM
Pulsed-Source Current
O1
VSD Diode Forward Voltage
O4
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-- -- 3.9
Integral reverse pn-diode
A
-- -- 22
in the MOSFET
-- -- 1.5
-- 259 --
-- 1.81 --
V TJ=25ΟC,IS=3.9A,VGS=0V
ns TJ=25ΟC,IF=5.5A
µC diF/dt=100A/ µs
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=40mH, IAS=3.9A, VDD=50V, RG=27Ω , Starting TJ =25oC
O3 ISD <_ 5.5A, di/dt <_ 140A/µs, VDD<_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature
©1999 Fairchild Semiconductor Corporation
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