IRFR/U3707ZPbF
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
โฮVDSS/โTJ
RDS(on)
VGS(th)
โVGS(th)/โTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ
โโโ
โโโ
0.023 โโโ
7.5 9.5
10 12.5
V/ยฐC Reference to 25ยฐC, ID = 1mA
e mโฆ VGS = 10V, ID = 15A
e VGS = 4.5V, ID = 12A
1.35 1.80 2.25 V VDS = VGS, ID = 25ยตA
โโโ -5.0 โโโ mV/ยฐC
IDSS
Drain-to-Source Leakage Current
โโโ โโโ 1.0 ยตA VDS = 24V, VGS = 0V
โโโ โโโ 150
VDS = 24V, VGS = 0V, TJ = 125ยฐC
IGSS
Gate-to-Source Forward Leakage
โโโ โโโ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
โโโ โโโ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
71 โโโ โโโ
โโโ 9.6 14
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
โโโ 2.6 โโโ
โโโ 0.90 โโโ
โโโ 3.5 โโโ
โโโ 2.6 โโโ
VDS = 15V
nC VGS = 4.5V
ID = 12A
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
โโโ 4.4 โโโ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
โโโ
โโโ
5.8
8.0
โโโ
โโโ
e nC VDS = 15V, VGS = 0V
VDD = 16V, VGS = 4.5V
โโโ 11 โโโ
ID = 12A
โโโ 12 โโโ ns Clamped Inductive Load
tf
Fall Time
โโโ 3.3 โโโ
Ciss
Input Capacitance
โโโ 1150 โโโ
VGS = 0V
Coss
Output Capacitance
โโโ 260 โโโ pF VDS = 15V
Crss
Reverse Transfer Capacitance
โโโ 120 โโโ
ฦ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
รย Avalanche Current
ย Repetitive Avalanche Energy
Typ.
โโโ
โโโ
โโโ
Max.
42
12
5.0
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
f Min. Typ. Max. Units
Conditions
โโโ โโโ 56
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
รย (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
โโโ โโโ 220
integral reverse
G
โโโ โโโ 1.0
e p-n junction diode.
S
V TJ = 25ยฐC, IS = 12A, VGS = 0V
โโโ 25
โโโ 17
38
26
e ns TJ = 25ยฐC, IF = 12A, VDD = 15V
nC di/dt = 100A/ยตs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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