IRFR1010Z Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.

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componentes Descripción

Fabricante

IRFR1010Z

Power MOSFET

Kersemi Electronic Co., Ltd. 

IRFR1010Z

IRFU1010Z

D-Pak

IRFR1010Z

I-Pak

IRFU1010Z

Features

lAdvanced Process Technology

lUltra Low On-Resistance

l175°C Operating Temperature

lFast Switching

lRepetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications,

thi

MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved G

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

Absolute Maximum Ratings

Parameter

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

IDM

Pulsed Drain Current

PD @TC = 25°C Power Dissipation

Linear Derating Factor

VGS

Gate-to-Source Voltage

d EAS (Thermally limited) Single Pulse Avalanche Energy

h EAS (Tested )

Single Pulse Avalanche Energy Tested Value

Ù IAR

Avalanche Current

g EAR

Repetitive Avalanche Energy

TJ

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

RθJC

RθJA

RθJA

j Junction-to-Case

ij Junction-to-Ambient (PCB mount)

j Junction-to-Ambient

D

VDSS = 55V

RDS(on) = 7.5mΩ

S

ID = 42A

Max.

91

65

42

360

140

0.9

± 20

110

220

See Fig.12a, 12b, 15, 16

-55 to + 175

300 (1.6mm from case )

y y 10 lbf in (1.1N m)

Typ.

–––

–––

–––

Max.

1.11

40

110

Units

A

W

W/°C

V

mJ

A

mJ

°C

Units

°C/W

2014-8-23

1

www.kersemi.com

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