IRF9953
400
V GS = 0V ,
f = 1MHz
C iss = Cgs + C g d , Cds S H OR TED
C rss = Cg d
C oss = Cds + C gd
300
C iss
C oss
200
Crs s
100
0
A
1
10
100
-VD S , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -2.3A
16
VDS =-10V
12
8
4
0
0
2
4
6
8
10
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
P DM
1 0.01
t1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJA + T A
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient