IRF9953TR Ver la hoja de datos (PDF) - International Rectifier

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Fabricante

IRF9953TR

HEXFET® Power MOSFET

International Rectifier 

IRF9953

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

-30 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = -1mA

RDS(on)

Static Drain-to-Source On-Resistance

––– 0.165 0.250

––– 0.290 0.400

Ω

VGS = 10V, ID = -1.0A „

VGS = 4.5V, ID = -0.50A „

VGS(th)

Gate Threshold Voltage

-1.0 ––– ––– V VDS = VGS, ID = -250µA

gfs

Forward Transconductance

––– -2.4 ––– S VDS = -15V, ID = -2.3A

IDSS

Drain-to-Source Leakage Current

––– ––– -2.0

VDS = 24V, VGS = 0V

––– ––– -25 µA VDS = 24V, VGS = 0V, TJ = 55°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 nA VGS = -20V

––– ––– -100

VGS = 20V

Qg

Total Gate Charge

––– 6.1 12

ID = -2.3A

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

––– 1.7 3.4

––– 1.1 2.2

nC VDS = -10V

VGS = -10V, See Fig. 10 „

td(on)

Turn-On Delay Time

––– 9.7 19

VDD = -10V

tr

td(off)

Rise Time

Turn-Off Delay Time

––– 14 28

––– 20 40

ns ID = -1.0A

RG = 6.0Ω

tf

Fall Time

––– 6.9 14

RD = 10Ω „

Ciss

Input Capacitance

––– 190 –––

VGS = 0V

Coss

Output Capacitance

––– 120 ––– pF VDS = -15V

Crss

Reverse Transfer Capacitance

––– 61 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min. Typ. Max. Units

Conditions

––– ––– 1.3

––– ––– 16

––– 0.82 1.2

––– 27 54

––– 31 62

MOSFET symbol

D

showing the

A integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = -1.25A, VGS = 0V ƒ

ns TJ = 25°C, IF = -1.25A

nC di/dt = -100A/µs ƒ

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 67mH

RG = 25Ω, IAS = -1.3A.

… Surface mounted on FR-4 board, t ≤ 10sec.

ƒ ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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