IRF7460PBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF7460PBF

HEXFET® Power MOSFET

International Rectifier 

IRF7460PbF

0.04

0.020

0.03

0.015

0.02

0.01

0.00

0

VGS = 4.5V

0.010

ID = 12A

VGS = 10V

0.005

20

40

60

80

100

ID , Drain Current (A)

2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0

VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 13a&b. Basic Gate Charge Test Circuit

and Waveform

Fig 13. On-Resistance Vs. Gate Voltage

600

ID

TOP

4.3A

500

7.7A

BOTTOM 9.6A

400

300

V(BR)DSS

tp

I AS

VDS

L

RG

20V

tp

D.U.T

IAS

0.01Ω

15V

DRIVER

+

-

VDD

A

Fig 14a&b. Unclamped Inductive Test circuit

and Waveforms

6

200

100

0

25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig 14c. Maximum Avalanche Energy

Vs. Drain Current

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