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IDT7M1014S25G Ver la hoja de datos (PDF) - Integrated Device Technology

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componentes Descripción
Fabricante
IDT7M1014S25G
IDT
Integrated Device Technology IDT
IDT7M1014S25G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
VTERM(2) Terminal Voltage
with Respect to
GND
VTERM(3) Terminal Voltage
TA
TBIAS
Operating
Temperature
Temperature
Under Bias
TSTG
IOUT
Storage
Temperature
DC Output
Current
Commercial
–0.5 to +7.0
–0.5 to +7.0
0 to +70
–10 to +85
–55 to +125
50
Military
–0.5 to +7.0
–0.5 to +7.0
–55 to +125
–65 to +135
–65 to +150
50
Unit
V
V
°C
°C
°C
mA
NOTES:
2819 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. Inputs and VCC terminals only.
3. I/O terminals only.
RECOMMENDED DC
OPERATING CONDITIONS
Symbol
Parameter
Min.
VCC Supply Voltage
4.5
GND Supply Voltage
0
VIH
Input HIGH Voltage
2.2
VIL
Input LOW Voltage –0.5(1)
NOTE:
1. VIL –3.0V for pulse width less than 20ns.
Typ.
5.0
0
Max. Unit
5.5 V
0
V
6.0 V
0.8 V
2819 tbl 03
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Ambient
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
VCC
5.0V ± 10%
5.0V ± 10%
2819 tbl 04
CAPACITANCE TABLE (TA = +25°C, f = 1.0MHz)
Symbol
Parameter
C_IN(1)
Input Capacitance (Address)
C_IN(2)
Input Capacitance (Data, R/W)
C_IN(3)
COUT
Input Capacitance (OE)
Output Capacitance (Data)
NOTE:
1. This parameter is guaranteed by design but not tested.
Conditions
V_IN = 0V
V_IN = 0V
V_IN = 0V
V_OUT = 0V
Max.
50
15
25
15
Unit
pF
pF
pF
pF
2819 tbl 05
7.03
3

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