IRF630NLTRLPBF Ver la hoja de datos (PDF) - International Rectifier

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componentes Descripción

Fabricante

IRF630NLTRLPBF

HEXFET® Power MOSFET

International Rectifier 

IRF630N/S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Ciss

Coss

Crss

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

200

–––

–––

2.0

4.9

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

0.26

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

7.9

14

27

15

4.5

7.5

575

89

25

Max.

–––

–––

0.30

4.0

–––

25

250

100

-100

35

6.5

17

–––

–––

–––

–––

–––

–––

–––

–––

–––

Units

V

V/°C

Ω

V

S

µA

nA

nC

ns

nH

pF

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 5.4A ƒ

VDS = VGS, ID = 250µA

VDS = 50V, ID = 5.4A ƒ

VDS = 200V, VGS = 0V

VDS = 160V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 5.4A

VDS = 160V

VGS = 10V ƒ

VDD = 100V

ID = 5.4A

RG = 13Ω

RD = 18Ω ƒ

Between lead,

D

6mm (0.25in.)

from package

G

and center of die contact

S

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 9.3

A showing the

integral reverse

G

––– ––– 37

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 5.4A, VGS = 0V ƒ

––– 117 176 ns TJ = 25°C, IF = 5.4A

––– 542 813 nC di/dt = 100A/µs ƒ

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Thermal Resistance

RθJC

RθCS

RθJA

RθJA

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface „

Junction-to-Ambient„

Junction-to-Ambient (PCB mount)…

Typ.

–––

0.50

–––

–––

Max.

1.83

–––

62

40

Units

°C/W

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