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CY7C0241 Ver la hoja de datos (PDF) - Cypress Semiconductor

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CY7C0241 Datasheet PDF : 21 Pages
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CY7C024/024A/0241
CY7C025/0251
Switching Characteristics Over the Operating Range (continued)[14]
Parameter
Busy Timing[20]
Description
7C024/024A/0241–15 7C024/024A/0241–25 7C024/024A/0241–35 7C024/024A/0241–55
7C025/0251–15
7C025/0251–25
7C025/0251–35
7C025/0251–55 Unit
Min
Max Min
Max
Min
Max
Min
Max
tBLA
BUSY LOW from Address
Match
15
20
20
45 ns
tBHA
BUSY HIGH from Address
15
20
20
40 ns
Mismatch
tBLC
BUSY LOW from CE LOW
tBHC
BUSY HIGH from CE HIGH
tPS
Port Setup for Priority
tWB
R/W HIGH after BUSY (Slave)
tWH
R/W HIGH after BUSY HIGH
(Slave)
tBDD[21]
BUSY HIGH to Data Valid
Interrupt Timing[20]
15
20
20
40 ns
15
20
20
35 ns
5
5
5
5
ns
0
0
0
0
ns
13
20
30
40
ns
Note 21
Note 21
Note 21
Note 21 ns
tINS
INT Set Time
tINR
INT Reset Time
Semaphore Timing
15
20
25
30 ns
15
20
25
30 ns
tSOP
SEM Flag Update Pulse (OE or 10
12
15
20
ns
SEM)
tSWRD
tSPS
tSAA
SEM Flag Write to Read Time 5
SEM Flag Contention Window 5
SEM Address Access Time
10
10
15
25
10
15
ns
10
15
ns
35
55 ns
Data Retention Mode
The CY7C024/024A/0241 is designed with battery backup in
mind. Data retention voltage and supply current are guaranteed
over temperature. The following rules insure data retention:
1. Chip enable (CE) must be held HIGH during data retention,
within VCC to VCC – 0.2V.
2. CE must be kept between VCC – 0.2V and 70% of VCC during
the power up and power down transitions.
3. The RAM can begin operation >tRC after VCC reaches the
minimum operating voltage (4.5V).
Timing
VCC
CE
Data Retention Mode
4.5V
VCC > 2.0V
4.5V
tRC
VCC to VCC – 0.2V
VIH
Parameter
ICCDR1
Test Conditions[22]
At VCCDR = 2V
Max
1.5
Unit
mA
Notes
20. Test conditions used are Load 2.
21. tBDD is a calculated parameter and is the greater of tWDDtPWE (actual) or tDDDtSD (actual).
22. CE = VCC, Vin = GND to VCC, TA = 25°C. This parameter is guaranteed but not tested.
Document #: 38-06035 Rev. *D
Page 10 of 21
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