IRF6665 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IRF6665 Datasheet PDF : 8 Pages
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IRF6665
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 16a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 16b. Gate Charge Waveform
+
-
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
DirectFET™ Substrate and PCB Layout, SH Outline
(Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
1
5
3
4
2
6
1- Drain
2- Drain
3- Gate
4- Source
5- Drain
6- Drain
6
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