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componentes Descripción

Fabricante

IRF3704ZCS

Power MOSFET

International Rectifier 

IRF3704ZCS/L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

20

–––

–––

–––

1.65

–––

–––

0.014

6.3

8.9

2.1

-5.6

–––

–––

7.9

11.1

2.55

–––

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 21A

e VGS = 4.5V, ID = 17A

V VDS = VGS, ID = 250µA

mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 16V, VGS = 0V

––– ––– 150

VDS = 16V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

48 ––– ––– S VDS = 10V, ID = 17A

Qg

Total Gate Charge

––– 8.7 13

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 2.9 –––

VDS = 10V

––– 1.1 ––– nC VGS = 4.5V

––– 2.3 –––

ID = 17A

––– 2.4 –––

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 3.4 –––

Qoss

td(on)

tr

td(off)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

––– 5.6 ––– nC VDS = 10V, VGS = 0V

––– 8.9 –––

e VDD = 10V, VGS = 4.5V

––– 38 –––

ID = 17A

––– 11 ––– ns Clamped Inductive Load

tf

Fall Time

––– 4.2 –––

Ciss

Input Capacitance

––– 1220 –––

VGS = 0V

Coss

Output Capacitance

––– 390 ––– pF VDS = 10V

Crss

Reverse Transfer Capacitance

––– 190 –––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

36

17

5.7

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

g Min. Typ. Max. Units

Conditions

––– ––– 67

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

A showing the

––– ––– 260

integral reverse

G

––– ––– 1.0

p-n junction diode.

S

e V TJ = 25°C, IS = 17A, VGS = 0V

––– 11

––– 2.3

17

3.5

e ns TJ = 25°C, IF = 17A, VDD = 10V

nC di/dt = 100A/µs

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