IRF1405ZL-7P Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF1405ZL-7P

HEXFET® Power MOSFET

International Rectifier 

IRF1405ZS/L-7P

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆ΒVDSS/∆TJ

RDS(on) SMD

VGS(th)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

55 ––– –––

––– 0.054 –––

––– 3.7 4.9

2.0 ––– 4.0

V VGS = 0V, ID = 250µA

e V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 88A

V VDS = VGS, ID = 150µA

gfs

Forward Transconductance

150 ––– ––– S VDS = 25V, ID = 88A

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 55V, VGS = 0V

––– ––– 250

VDS = 55V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -20V

Qg

Total Gate Charge

––– 150 230 nC ID = 88A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

––– 37 –––

––– 64 –––

e VDS = 44V

VGS = 10V

td(on)

Turn-On Delay Time

––– 16 ––– ns VDD = 28V

tr

Rise Time

––– 140 –––

ID = 88A

td(off)

tf

Turn-Off Delay Time

Fall Time

––– 170 –––

––– 130 –––

d RG = 5.0Ω

VGS = 10V

LD

Internal Drain Inductance

––– 4.5 ––– nH Between lead,

D

LS

Internal Source Inductance

6mm (0.25in.)

––– 7.5 –––

from package

G

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

––– 5360 –––

––– 1310 –––

––– 340 –––

––– 6080 –––

––– 920 –––

––– 1700 –––

and center of die contact

S

pF VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 44V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 44V

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min. Typ. Max. Units

Conditions

––– ––– 150

MOSFET symbol

D

A showing the

––– ––– 590

integral reverse

G

––– ––– 1.3

––– 63 95

––– 160 240

e p-n junction diode.

S

V TJ = 25°C, IS = 88A, VGS = 0V

e ns TJ = 25°C, IF = 88A, VDD = 28V

nC di/dt = 100A/µs

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

‚ Limited by TJmax, starting TJ = 25°C,

… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

† This value determined from sample failure population. 100%

L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V.

tested to this value in production.

Part not recommended for use above this value.

ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

‡ This is applied to D2Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and

„ Coss eff. is a fixed capacitance that gives the same

soldering techniques refer to application note #AN-994.

charging time as Coss while VDS is rising from 0 to 80% ˆ Rθ is measured at TJ of approximately 90°C.

VDSS.

‰ Solder mounted on IMS substrate.

2

www.irf.com

Share Link: