IR3101 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IR3101 Datasheet PDF : 10 Pages
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IR3101
MOSFET Characteristics
VBIAS (VCC, VB) = 15V and TA = 25oC unless otherwise specified. The VDD parameter is referenced to COM.
Symbol
V(BR)DSS
IDSS
RDS(on)
VSD
RDS(on)
VSD
EON
EOFF
EREC
tRR
EON
EOFF
EREC
tRR
Coss
Definition
Drain-to-Source breakdown
voltage
Drain-to-Source leakage
current
Static drain-to-source on
resistance
Diode forward voltage
Static drain-to-source on
resistance
Diode forward voltage
Turn-On energy losses
Turn-Off energy losses
Body-Diode reverse recovery
Llosses
Reverse recovery time
Turn-On energy losses
Turn-Off energy losses
Body-Diode reverse recovery
Llosses
Reverse recovery time
Output capacitance
Min.
500
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-
-
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Typ Max. Units Conditions
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-
V VIN=0V, ID=250µA
-
50
µA VDS=500V, VIN=0V
0.8
1.0
0.82 0.9
1.7
2.0
0.70 0.79
100 135
5
10
10
20
105 180
150 205
10
17
15
35
130 230
-
100
Ω ID = 1.5A
V ID = 1.5A, VIN=0V
Ω ID = 1.5A, TJ=125°C
V ID = 1.5A, VIN=0V, TJ=125°C
µJ
µJ IF = 1.5A
µJ
VCC = 300V
di/dt = 200A/µs
ns
µJ
µJ
TJ=125°C
IF = 1.5A
µJ VCC = 300V
ns di/dt = 200A/µs
pF VIN=0V, VDD=30V, f=1MHz
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