ST93CS66 Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

ST93CS66

4K (256 X 16) SERIAL MICROWIRE EEPROM

STMicroelectronics 

ST93CS66, ST93CS67

Figure 2A. DIP Pin Connections

Figure 2B. SO Pin Connections

ST93CS66

ST93CS67

S1

C2

8 VCC

7 PRE

D3

6W

Q4

5 VSS

AI00907B

ST93CS66

ST93CS67

NC 1

S2

C3

NC 4

D5

Q6

NC 7

14 NC

13 VCC

12 PRE

11 NC

10 W

9 VSS

8 NC

AI00908C

Table 2. Absolute Maximum Ratings (1)

Warning: NC = Not Connected.

Symbol

Parameter

Value

Unit

TA

Ambient Operating Temperature

–40 to 85

°C

TSTG Storage Temperature

–65 to 150

°C

TLEAD Lead Temperature, Soldering

(SO14 package)

(PSDIP8 package)

40 sec

10 sec

215

260

°C

VIO

Input or Output Voltages (Q = VOH or Hi-Z)

–0.3 to VCC +0.5

V

VCC

Supply Voltage

–0.3 to 6.5

V

VESD

Electrostatic Discharge Voltage (Human Body model) (2)

Electrostatic Discharge Voltage (Machine model) (3)

2000

V

500

V

Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”

may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other

conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum

Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other

relevant quality documents.

2. MIL-STD-883C, 3015.7 (100pF, 1500 Ω).

3. EIAJ IC-121 (Condition C) (200pF, 0 Ω).

DESCRIPTION (cont’d)

The data is then clocked out serially. The address

pointer is automatically incremented after the data

is output and, if the Chip Select input (S) is held

High, the ST93CS66/67 can output a sequential

stream of data words. In this way, the memory can

be read as a data stream of 16 to 4096 bits, or

continuously as the address counter automatically

rolls over to 00 when the highest address is

reached.

Within the time required by a programming cycle

(tW), up to 4 words may be written with the help of

the Page Write instruction; the whole memory may

also be erased, or set to a predetermined pattern,

by using the Write All instruction.

Within the memory, an user defined area may be

protected against further Write instructions. The

size of this area is defined by the content of a

Protect Register, located outside of the memory

array. As a final protection step, data may be per-

manently protected by programming a One Time

Programing bit (OTP bit) which locks the Protect

Register content.

Programming is internally self-timed (the external

clock signal on C input may be disconnected or left

running after the start of a Write cycle) and does

not require an erase cycle prior to the Write instruc-

tion. The Write instruction writes 16 bits at one time

into one of the 256 words, the Page Write instruc-

tion writes up to 4 words of 16 bits to sequential

locations, assuming in both cases that all ad-

dresses are outside the Write Protected area. After

the start of the programming cycle, a Ready/Busy

signal is available on the Data output (Q) when the

Chip Select (S) input pin is driven High.

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