ST93CS66 Ver la hoja de datos (PDF) - STMicroelectronics
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ST93CS66 Datasheet PDF : 16 Pages
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ST93CS66
ST93CS67
4K (256 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
– 3V to 5.5V for the ST93CS66
– 2.5V to 5.5V for the ST93CS67
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS66 and ST93CS67 are replaced by
the M93S66
8
1
PSDIP8 (B)
0.25mm Frame
14
1
SO14 (ML)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST93CS66 and ST93CS67 are 4K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 4K bit memory is organized as 256 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
Table 1. Signal Names
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
PRE
W
Protect Enable
Write Enable
VCC
Supply Voltage
VSS
Ground
D
C
S
PRE
W
VCC
ST93CS66
ST93CS67
VSS
Q
AI00906B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
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